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https://uu.diva-portal.org/smash/project.jsf?pid=project:4107
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Title [sv]
Laddingstransport i Dopad Diamant
Title [en]
Charge Transport in Doped Diamond
Abstract [sv]
Known dopants in diamond are situated relatively deep in the band-gap and therefore the thermal activation of these dopants at room-temperature is low. To achieve good conduction and injection properties in doped devices it is necessary to have high dopant activation. A way of circumventing this problem, so that the extreme electronic properties of diamond can be exploited fully in devices in the future, is to introduce so-called pulse-doped (or delta-doped) layers. The first pulse-doped layers in diamond have recently been achieved, but very little is known about the transport properties of such layers.The main purpose of this research proposal is to study charge transport and impurity scattering in pulse-doped single-crystalline CVD diamond layers. By using a transient current technique (TCT), which our group has developed, we intend to investigate charge transport in the two dimensional hole gas and measure carrier sheet density and drift mobility as a function of temperature. We intend to study pulse doped layers of different thickness, impurity concentrations and grown under different deposition conditions. The fundamental research in this project is intended to directly improve the understanding of crucial electronic transport properties of diamond. However, our research is also motivated by the desire to develop epitaxial diamond suitable for future electronic device applications.
Principal Investigator
Isberg, Jan
Uppsala University
Coordinating organisation
Uppsala University
Funder
Vetenskapsrådet
Period
2011-01-01 - 2013-12-31
Identifiers
DiVA, id: project:4107
Project, id: 2010-04011_VR
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