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Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and trap centers in the bandgap, deeper than previously reported by DLTS characterization in any material. Performance of the system was tested by carrying out measurements on the well-known intrinsic defects in n-type 4H-SiC in the temperature range 300-950 K. Experimental observations performed on 4H-SiC Schottky diodes were in good agreement with the literature. However, the DLTS measurements were restricted by the operation and quality of the electrodes.