Substrate orientation influence on nanotwinning in magnetron sputtered CoCrFeMnNi and Ni coatingsShow others and affiliations
2024 (English)In: Materials & design, ISSN 0264-1275, E-ISSN 1873-4197, Vol. 246, article id 113343Article in journal (Refereed) Published
Abstract [en]
This study reveals the influence of crystal orientation on formation of growth twins in magnetron-sputtered coatings. A comparison between materials with low and high stacking fault energy (SFE) was made: CoCrFeMnNi (25 mJ/m(2)) and Ni (125 mJ/m(2)). The coatings were grown on a polycrystalline 316L stainless-steel substrate with near-random crystal texture, providing a comprehensive selection of samples on a single substrate. Electron backscatter diffraction was used to identify the film orientation, followed by transmission electron microscopy of selected regions. The presence and density of twins depended on both the material and the growth orientation. For Ni, nanotwins were observed on < 5 % of the substrate grains, on growth directions closest to (1 1 1) . All other film orientations grew epitaxially with a cube-on-cube relationship. For CoCrFeMnNi, nanotwinning was observed on 50 % of the substrate grains, deviating < 35 degrees from (1 1 1) . In the nanotwinned regions, the twin spacing was 10-100 nm for Ni and 2-20 nm for CoCrFeMnNi. The presence of nanotwins increased hardness in both materials. The mechanism behind these differences is discussed, together with other parameters for controlling twin density. Our results show that control of the growth process can be used for nanotwin-engineering in magnetron-sputtered materials with low SFE.
Place, publisher, year, edition, pages
Elsevier, 2024. Vol. 246, article id 113343
Keywords [en]
CoCrFeMnNi, HEA, Magnetron sputtering, Nanotwinning, 4D-STEM, HRTEM
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-541287DOI: 10.1016/j.matdes.2024.113343ISI: 001331620300001OAI: oai:DiVA.org:uu-541287DiVA, id: diva2:1909488
Funder
Vinnova, 2016-05156Swedish Research Council, 2019-002072024-10-302024-10-302024-10-30Bibliographically approved