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The integration of single-layer graphene with diamond substrates offers a promising platform for highperformance electronic devices by utilizing the exceptional properties of both materials. This study describes a fabrication process and transport measurements of single-layer graphene devices on diamond substrates featuring two surface terminations: hydrogen (H-terminated, thermal process) and oxygen (O-terminated, plasma treatment). The carrier transport properties were investigated using Hall effect measurements over a broad temperature range (80-400 K) under high-vacuum conditions (1 x 10^-4 mbar). Our findings reveal that thermal annealing significantly improves the graphene-diamond interface quality, causing a notable increase in carrier mobility for devices on both H- and O-terminated from 1439 to 1644 cm²/Vs and from 1238 to 1340 cm²/Vs, respectively. We also found that the effect of remote interfacial phonon scattering on high-temperature mobility is affected by the termination type. These findings highlight the importance of substrate surface engineering and offer a pathway for optimizing graphene-diamond heterostructures for advanced electronic applications.

This study investigates the impact of temperature variations on the photoelectrical detection ofmagnetic resonances (PDMR) in nitrogen-vacancy (NV) ensembles within single-crystalline, CVD-grown diamond, spanning temperatures from 77 K to 395 K. It is demonstrated that the chargecollection efficiency is sufficient for performing PDMR across this temperature range. Recognizingthe influence of defect states on the photoelectric detection, we utilize a 561-nm laser to reducephotoionization of P1 defects, thereby optimizing sensitivity. Our findings indicate that PDMR isa promising alternative to optically detected magnetic resonance, which can meet the requirementsfor miniaturization and high sensitivity in quantum sensing applications over a wide temperaturerange.

Graphene on diamond has emerged as a promising platform for various electronic applications. This brief review article explores the recent advancements and the potential of graphene on diamond for electronic applications with a focus on single-crystal (SC) chemically vapor-deposited and high-pressure and high-temperature diamond. Device fabrication techniques, properties, and performance of single-layer graphene on diamond in various electronic devices are discussed. This hybrid system's challenges and prospects are also analyzed. A particular emphasis is placed on the unique benefits of diamond as a substrate for graphene and its growth, including its high thermal conductivity, mechanical strength, high optical phonon energy, and the importance of achieving high-quality single-layer graphene on SC diamond.

The high current-carrying capacity of graphene is essential for its use as an interconnect in electronic and spintronic circuits. At the same time, knowing the breakdown limits and mechanism under high fields can enable new device design strategies. In this work, we push the current carrying capacity of the scalable form of chemical vapor deposited (CVD) graphene employing a high-thermal conducting single crystalline diamond substrate. Our experiments on CVD graphene reveal extremely high current densities > 10⁹ A/cm² in graphene on the diamond with both ohmic (low-resistive) and tunneling tunnel (high-resistive) contacts. Measurements on ferromagnetic (TiO_x/Co) and metallic (Ti/Au) contacts demonstrate current densities of ∼1.16×10⁹ A/cm² and ∼1.7×10⁹ A/cm², respectively. The tunnel (high-resistive) contacts exhibit a shunting of graphene under high currents via the bottom graphitized diamond, resulting in dielectric breakdown and via alternative conducting paths. Electrical measurements show a distinct threshold for conducting paths of graphitized diamond, in tune accordance with Middleton-Wingreen's theory. Our results of high current densities achieved in CVD graphene, with distinct dependence on ohmic and tunneling, contact resistance, and the observed breakdown mechanism, provide new insights for enabling high-current all carbon circuits.

The outstanding electronic properties of graphene make this material a candidate for many applications, for instance, ultra-fast transistors. However, self-heating and especially the detrimental influence of available supporting substrates have impeded progress in this field. In this study, we fabricate graphene-diamond heterostructures by transferring graphene to an ultra-pure single-crystalline diamond substrate. Hall-effect measurements were conducted at 80 to 300 K on graphene Hall bars to investigate the charge transport properties in these devices. Enhanced hole mobility of 2750 cm(2) V-1 s(-1) could be observed at room-temperature when using diamond with reduced nitrogen (N-s(0)) impurity concentration. In addition, by electrostatically varying the carrier concentration, an upper limit for mobility is determined in the devices. The results are promising for enabling carbon-carbon (C-C) devices for room-temperature applications.

Although theoretical investigations indicate that the successful combination of graphene and diamond would give interesting properties, only a limited number of reports dealing with the subject have been published. Here, we present a rapid thermal process (RTP) which involves nickel (Ni) as metal catalyst for a direct growth of graphene on diamond at a temperature of 1073 K for 60 s. This process operates with a combination of a lower temperature and for a shorter duration than what has previously been reported. Thin Ni films of different thicknesses were deposited on top of (100) single-crystalline diamond. After RTP, the coverage of monolayer graphene was found to be around 20% shown by the intensity ratio between the 2D- and G-peak using Raman spectroscopy on 50 nm thick Ni films. In addition, x-ray photoelectron spectroscopy and atomic force microscopy analysis were conducted. For electrical characterization, Hall-effect measurements were performed at temperatures between 80 and 360 K.

As the world transitions to renewable electrification to reduce CO2 emissions, remote island electrification remains a challenge. Although some islands are connected to the grid, many still rely on fossil fuels for electricity generation. Several studies indicate that renewable energy sources, such as wave energy, have the potential to make these islands self-reliant because of their substantial power potential. However, research on the control of power electronics converters for these systems remains limited. This paper proposes isolated grid-forming control for island electrification to address this gap using a wave energy converter and an energy storage system. Resistive loading control is implemented to optimize the power absorption of the generator. The result illustrates the establishment of the required AC voltage and 50 Hz frequency in the island load, ensuring harmonics compliance with the recommended standards. Experiments were conducted to test and validate the operation of different converter controls. The results also demonstrate the converter's ability to black-start the island load and automatically transition the load current with varying loads in a few milliseconds. Furthermore, the power quality produced by the wave energy converter presents one of its significant challenges. Therefore, the performance of two distinct converter technologies was compared. The performance of the IGBT converter was evaluated against that of the SiC-based converter in terms of power quality. The study demonstrates that the use of SiC enhances power quality in all switching frequencies tested, achieving the most significant reduction of 78% in current THD and 92% in voltage THD at the 25 kHz switching frequency, thus validating its advantages for wave energy converter applications.

Understanding the electrically active defects and impurities in semiconductors, especially in intrinsic or unintentionally doped wide bandgap materials, still remains a challenge. Here, time-of-flight (ToF) measurement using a solid state light source (355 and 213 nm) was performed on intrinsic silicon carbide and single-crystalline diamond. The charge transient spectroscopy (QTS) and the inverse Laplace (IL) QTS methods were applied to analyze the ToF results. Using these methods, we were able to trace the existing impurities in both materials. However, ILQTS proved to be more sensitive, with higher resolution for detection of existing multiple defects. The results suggest that this system can successfully be employed to investigate electrically active impurities at different energy states in highly resistive and undoped materials.