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Diamond is a promising semiconductor material owing to its exceptional electrical properties, including a wide bandgap, high breakdown voltage, high thermal conductivity, and high carrier mobility. These characteristics make diamond a standout candidate for high-power and high­frequency electronic applications. Recently, its unique conduction band properties have also attracted attention for potential use in quantum sensing technologies. Despite this growing focus on the conduction band, charge transport in the valence band remains critically important. In practical device applications, boron is the most commonly used dopant and functions as an acceptor, making a deep understanding of valence-band transport essential. This thesis focuses on hole transport in diamond and is divided into two main parts. The first part cancerns charge transport characterization techniques. Here, we investigate a technique for measuring the electrical properties of wide-bandgap materials using the Time-of-Flight (ToF) measurement. In particular, we discuss approaches for defect characterization based on ToF measurements. Two analysis methods, the Charge Transient Spectroscopy (QTS) and the Inverse Laplace QTS (ILQTS), are implemented and compared. The results demonstrate that ToF measurements can serve as an alternative defect characterization technique to the conventional Deep Level Transient Spectroscopy (DLTS) for wide-bandgap and intrinsic materials. Furthermore, the ILQTS method was found to provide higher resolution than the conventional QTS approach. The second part addresses charge transport theory. W e explore carrier transport dynamics from a theoretical perspective by applying transport theory to Monte Carlo simulations. By comparing simulation results with experimental measurements, we achieve a deeper understanding of charge transport mechanisms. The simulations include both heavy-hole and light-hole bands, enabling consideration of interband as well as intraband scattering processes. Ultimately, a new deformation potential constant for acoustic phonon scattering is extracted. Moreover, the redistribution of the heavy and light ho les is observed and analyzed in detail. Overall, this thesis provides a comprehensive understanding of charge transport in diamond from both experimental and theoretical perspectives.