Back contact passivation with Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se2 bifacial solar cells on In2O3:Sn back contactShow others and affiliations
2025 (English)In: 2025 IEEE 53rd Photovoltaic Specialists Conference (PVSC), Institute of Electrical and Electronics Engineers (IEEE), 2025, p. 0229-0231Conference paper, Published paper (Refereed)
Abstract [en]
This study investigates the effect of Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se2 (ACIGS) bifacial solar cells on In2O3:Sn (ITO) transparent substrates. It is found that the performance of cells on ITO equals or supersedes the performance of reference cells made on Mo. Up to 60% bifaciality was found for the cells on ITO. At the ACIGS/ITO interface a layer of 3 nm GaOx is identified with STEM and is believed to have a passivating effect on the back contact. An increase in the steepness of the Ga-grading results in better overall performance for front and rear side measurements, which likely indicates an added rear-contact passivation effect.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2025. p. 0229-0231
Series
Conference record of the IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, E-ISSN 2995-1755
Keywords [en]
solar cells, thin film solar cells, CIGS, ACIGS
Keywords [sv]
solceller, CIGS, ACIGS, tunnfilmsolceller
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-572717DOI: 10.1109/pvsc59419.2025.11133411ISI: 001572091100085Scopus ID: 2-s2.0-105016145617ISBN: 979-8-3315-3445-5 (print)ISBN: 979-8-3315-3444-8 (electronic)OAI: oai:DiVA.org:uu-572717DiVA, id: diva2:2019271
Conference
2025 IEEE 53rd Photovoltaic Specialists Conference (PVSC), Montreal, QC, Canada, 08-13 June, 2025
Funder
Knut and Alice Wallenberg Foundation2025-12-052025-12-052026-03-10Bibliographically approved